OPTOELECTRONIC SEMICONDUCTING STRUCTURE WITH NANOWIRES AND METHOD OF FABRICATING SUCH A STRUCTURE

摘要

The invention relates to an optoelectronic semiconducting structure (100) comprising a semiconducting substrate (110) comprising a first face (111), a nucleation layer (120) and a nanowire (160) in contact with the nucleation layer, the nucleation layer (120) being formed of a large-gap semiconductor whose forbidden band energy is greater than 5 eV. The nucleation layer (120) covers a part of the first face (111) which is termed the nucleation part, the part (114) of the first face (111) which is not covered by the nucleation layer (120) being termed the free part. The structure furthermore comprises a conducting layer (141) in contact with the free part (114) of the substrate (110), said conducting layer being also in contact with the nanowire around the periphery of the nanowire (160). The invention also relates to a method of fabricating such a structure (100).