SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a nitride semiconductor device having high breakdown voltage and low on-resistance, and to provide a method of manufacturing the same.SOLUTION: There is provided a semiconductor device including: a first layer composed of a first nitride semiconductor; a second layer provided on the first layer and composed of a second nitride semiconductor having a wider band gap than the first nitride semiconductor; a source electrode and a drain electrode provided on the second layer; and a gate electrode provided between the source electrode and the drain electrode on the second layer. The second layer has a first region that is selectively provided on a surface of the second layer between the gate electrode and the drain electrode and contains fluorine. The concentration of fluorine contained in the first region is higher than that contained in a portion of the second layer under the gate electrode.