| 摘要 |
In a semiconductor device (100), a light emitting element (120) has been mounted on an upper plane of a semiconductor substrate (102). In an impurity diffusion region of the semiconductor substrate (102), a P conducting type of a layer (104), and an N layer (106) have been formed, while an N conducting type impurity is implanted to the P layer (104), and then the implanted impurity is diffused to constitute the N layer (106). A zener diode (108) made of a semiconductor device has been formed by the P layer (104) and the N layer (106). |
