INDUCTIVELY COUPLED PLASMA PROCESSING DEVICE, PLASMA PROCESSING METHOD, AND STORAGE MEDIUM

摘要

PROBLEM TO BE SOLVED: To provide an inductively coupled plasma processing device having higher power efficiency.SOLUTION: An inductively coupled plasma processing device comprises: first and second antenna circuits 13a and 13b connected in parallel for forming an induction field in a processing chamber by being supplied with high-frequency power; and impedance adjustment means VC connected to at least one of the first and second antenna circuits 13a and 13b. The inductively coupled plasma processing device generates inductively coupled plasma in the processing chamber by making phases of impedance of the first and second antenna circuits 13a and 13b be reverse to each other, controls plasma electron density distribution of the inductively coupled plasma generated in the processing chamber by controlling at least one current value of the first and second antenna circuits 13a and 13b by impedance adjustment using the impedance adjustment means VC and controls a value of the impedance adjustment by the impedance adjustment means VC so that parallel resonance does not occur between the first and second antenna circuits 13a and 13b, in generating the inductively coupled plasma in the processing chamber.