| 摘要 |
PROBLEM TO BE SOLVED: To solve a problem resulting from necessity to perform heat treatment at a temperature exceeding a melting point of a silicon oxide film in order to activate a PN layer of an oxide film separation type SiC substrate for high voltage drive element.SOLUTION: An SiC compound semiconductor according to the invention is characterized in that an element substrate, whose base substrate is made of a material having a high melting point, such as poly-SiC, and in which a single crystal SiC compound semiconductor is formed on an insulation film including a silicon oxide film, has a structure where the silicon oxide film is surrounded by a material having a melting point higher than an activation temperature of impurities of a PN layer that implants ions to the single crystal SiC, thereby preventing the silicon oxide film from scattering or disappearing even in activation processing at a high temperature at which the silicon oxide film melts. |
