发明名称 |
SELF-FORMING, SELF-ALIGNED BARRIERS FOR BACK-END INTERCONNECTS AND METHODS OF MAKING SAME |
摘要 |
Processes of forming an insulated wire into an interlayer dielectric layer (ILD) of a back-end metallization includes thermally treating a metallic barrier precursor under conditions to cause at least one alloying element in the barrier precursor to form a dielectric barrier between the wire and the ILD. The dielectric barrier is therefore a self-forming, self-aligned barrier. Thermal processing is done under conditions to cause the at least one alloying element to migrate from a zone of higher concentration thereof to a zone of lower concentration thereof to further form the dielectric barrier. Various apparatus are made by the process.
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申请公布号 |
US2013260553(A1) |
申请公布日期 |
2013.10.03 |
申请号 |
US201313893143 |
申请日期 |
2013.05.13 |
申请人 |
YOO HUI JAE;BIELEFELD JEFFREY D.;KING SEAN W.;BALAKRISHNAN SRIDHAR |
发明人 |
YOO HUI JAE;BIELEFELD JEFFREY D.;KING SEAN W.;BALAKRISHNAN SRIDHAR |
分类号 |
H01L21/768 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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