发明名称 AFTERIMAGE DETECTION DEVICE, SEMICONDUCTOR TEST DEVICE, AND AFTERIMAGE DETECTION METHOD
摘要 PROBLEM TO BE SOLVED: To realize an afterimage detection device that is capable of easily evaluating an afterimage characteristic of a CMOS image sensor only through drive control thereof without using a light source for afterimage detection.SOLUTION: An afterimage detection device 100 that maintains a CMOS image sensor 100a having two operation modes that are a full pixel read mode, in which electric charges are read from all pixels, and an interleave read mode, in which electric charges are read from pixels other than pixels of odd-numbered lines, under a light-shielded state and detects an afterimage by dark current includes: a sensor control part 113 for switching between the operation modes of the CMOS image sensor 100a that are the full pixel read mode and the interleave read mode; and an image obtainment device 110 that generates a picked-up image by performing signal processing on an output signal Vout from the CMOS image sensor 100a, wherein an afterimage evaluation is made based on difference in output signal levels between pixels of odd-numbered lines and pixels of even-numbered lines in the second frame after mode switching from the interleave read mode to the full pixel read mode.
申请公布号 JP2013197700(A) 申请公布日期 2013.09.30
申请号 JP20120060606 申请日期 2012.03.16
申请人 SHARP CORP 发明人 NAGAO TOSHIAKI
分类号 H04N5/374;H04N5/343;H04N5/361;H04N17/00 主分类号 H04N5/374
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