| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device in which stable characteristics can be obtained, and to provide a method of manufacturing the same.SOLUTION: A semiconductor device includes a semiconductor region, a gate electrode, and a gate insulating film. The semiconductor region is provided on a primary surface of a substrate, is a convex region protruding toward a first direction perpendicular to the primary surface, and extends in a second direction along the primary surface. The gate electrode extends so as to cross the semiconductor region when viewed in the first direction. The gate insulating film is provided between the semiconductor region and the gate electrode. The etching rate of a first portion of the gate electrode near the semiconductor region is higher than that of a second portion that is farther apart from the semiconductor region than the first portion. |
