| 摘要 |
PROBLEM TO BE SOLVED: To provide a nonvolatile storage device and a manufacturing method of the same, which improve uniformity of a film thickness of a first electrode layer and adhesion between the first electrode layer and a resistance change layer.SOLUTION: A nonvolatile storage device according to an embodiment comprises a first function layer including a first electrode layer, a second electrode layer and a resistance change layer. The second electrode layer is opposed to the first electrode layer. The resistance change layer is provided between the first electrode layer and the second electrode layer, in which a resistive state transits. The first function layer includes a first intermediate layer which is provided between the first electrode layer and the resistance change layer and which contacts the first electrode layer and the resistance change layer. |
