发明名称 SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To prevent occurrence of through current caused by a level of an output signal becoming unstable.SOLUTION: A semiconductor device has: an internal voltage generating circuit 110 which creates internal electric potential VA from power supply potential VDD1 to supply the internal electric potential VA to a node V, and stops creation of the internal electric potential VA corresponding to a deep power-down signal DPPWD; a voltage changeover circuit 190 which supplies power supply potential VDD2 to the node V corresponding to the deep power-down signal DPPWD; and a circuit block 120 which operates by receiving electric potential of the node V, and, before and after the electric potential of the node V is switched from the internal electric potential VA to the power supply potential VDD2 corresponding to the deep power-down signal DPPWD, outputs an output signal of the same logical level. According to the present invention, even in the case where creation of the internal voltage VA is stopped, the output signal output from the circuit block 120 does not become unstable, so that reduction of current consumption of a circuit connected in a subsequent stage is made possible.
申请公布号 JP2013196732(A) 申请公布日期 2013.09.30
申请号 JP20120064748 申请日期 2012.03.22
申请人 ELPIDA MEMORY INC 发明人
分类号 G11C11/4074;H03K19/00 主分类号 G11C11/4074
代理机构 代理人
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