摘要 |
PURPOSE: A transparent conductive layer manufacturing method using direct liquid injection-type CVD(Chemical Vapor Deposition) and a transparent conductive layer manufactured by the same are provided to secure the deposition speed of a transparent conductive layer over a certain level by maintaining a deposition temperature of 200-600°C. CONSTITUTION: A transparent conductive layer manufacturing method using direct liquid injection-type CVD is as follows. A precursor solution is prepared by dissolving an organic metal compound in an organic solvent comprising zinc or titanium, and another precursor solution is prepared by dissolving additives, which includes at least one selected from the group consisting of aluminum, gallium, and niobium, in an organic solvent. The two precursor solutions are mixed. The precursor solution mixture is injected into a vaporizer through a solution injector and vaporized. The vapor generated by vaporization and reactive gas are injected into a deposition reactor. The vapor and the reactive gas contact a glass substrate and a conductive layer is formed. |