发明名称 |
Semiconductor discharge devices and methods of formation thereof |
摘要 |
In one embodiment, a method of forming a semiconductor device includes forming a well region within a substrate. A plurality of transistors is formed within and/or over the well region. The method further includes forming a first discharge device within the substrate. The first discharge device is coupled to the well region and a low voltage node. During subsequent processing, the first discharge device discharges charge from the well region.
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申请公布号 |
US8541845(B2) |
申请公布日期 |
2013.09.24 |
申请号 |
US201113004334 |
申请日期 |
2011.01.11 |
申请人 |
SCHUETZ ALFRED;MARTIN ANDREAS;ZIMMERMANN GUNNAR;INFINEON TECHNOLOGIES AG |
发明人 |
SCHUETZ ALFRED;MARTIN ANDREAS;ZIMMERMANN GUNNAR |
分类号 |
H01L27/092;H01L21/336 |
主分类号 |
H01L27/092 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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