| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor memory device that allows adjusting the electrical characteristics of a rectifier to a given value.SOLUTION: A semiconductor memory device includes a semiconductor layer, a variable resistance layer, a side wall layer, and a buried layer. The semiconductor layer functions as a rectifier. The variable resistance layer is provided above or under the semiconductor layer and reversibly changes the resistance value. The side wall layer is in contact with side walls of the semiconductor layer. The buried layer is buried in the side wall layer and is composed of a material different from the material of the side wall layer. By these configurations, the electrical characteristics of the rectifier is adjustable to a given value. |
