NON-VOLATILE MEMORY DEVICE AND PROGRAM METHOD THEREOF

摘要

PURPOSE: A non-volatile memory device and a programming method thereof reduce program disturbance and secure a pass voltage window by determining a program order considering the size of a channel hole of a cell string. CONSTITUTION: A page buffer circuit (130) is connected to bit lines of a memory cell array. A row decoder (120) is connected to the memory cell array through word lines and selection lines. The row decoder transmits a word line voltage to program a first memory cell first before a second memory cell among multiple memory cells in a program operation. The first memory cell is placed over the second memory cell based on a substrate. The diameter of a channel hole of the first memory cell is larger than the diameter of a channel hole of the second memory cell.