| 摘要 |
PROBLEM TO BE SOLVED: To provide a thermoelectric conversion element capable of preventing deterioration in performance caused by variation in silicon concentration, sintering cracks in a sintering process, and delamination at a p-n junction part, and of being used in a high temperature region of 400-600°C.SOLUTION: A thermoelectric conversion element is formed by laminating a plurality of pairs each having a p-type semiconductor 11 and an n-type semiconductor 12 both contain an Mn-Si based compound as a main component so that they are laminated alternately. An insulation material 13 intervenes at a part of a junction part between the p-type semiconductor 11 and the n-type semiconductor 12. The p-type semiconductor 11 and the n-type semiconductor 12 respectively have a buffer sheet 21 whose Si concentration is adjusted so as to be lower by 0.5-3 mol%, on boundary surfaces with the insulation material 13. The p-type semiconductor 11 consists of silicide containing a material as a main component, the material having a phase represented by a composition formula: MnSi(1.7≤x≤1.8) as a main phase. The n-type semiconductor 12 consists of silicide containing a material as a main component, the material having a phase represented by a composition formula: (MnFe)Si(0.25≤y≤0.40, 1.6≤x≤1.75) as a main phase. |
