发明名称 |
SOI wafer, method for producing same, and method for manufacturing semiconductor device |
摘要 |
An SOI wafer including: a supporting substrate 1; a BOX layer 2 provided above the supporting substrate 1, the BOX layer 2 being formed by a thermal oxidization; a gettering layer 3 provided immediately on the BOX layer 2 and mainly composed of a silicon which contains one or more of oxygen, carbon and nitrogen and contains at least oxygen; and an S layer 4 in which semiconductor devices are to be formed, the S layer 4 being mainly composed of a monocrystalline silicon.
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申请公布号 |
US8531000(B2) |
申请公布日期 |
2013.09.10 |
申请号 |
US201113214007 |
申请日期 |
2011.08.19 |
申请人 |
YONEDA KENJI;PANASONIC CORPORATION |
发明人 |
YONEDA KENJI |
分类号 |
H01L29/00;H01L27/01;H01L27/12;H01L31/0392 |
主分类号 |
H01L29/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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