FORMING METHOD OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming a semiconductor device is provided to improve the reliability of a metal line by improving the electron mobility of a first metal pattern. CONSTITUTION: An isolation pattern (106a) having an opening part is formed on a semiconductor substrate. A first diffusion barrier layer and a first metal layer are successively formed. The first diffusion barrier layer covers the inner wall of a trench and the upper surface of the isolation pattern. A reflowing process is performed on a first metal pattern (130a) to form a first metal pattern within a part of the opening part. A second metal pattern (150a) is formed on the first metal pattern.