发明名称 METHOD FOR PRODUCING POLYCRYSTALLINE SILICON ROD
摘要 PROBLEM TO BE SOLVED: To provide a technique for efficiently producing large diameter polycrystalline silicon rods from a silane compound as a raw material.SOLUTION: A circuit 16 is disposed between two pairs of shrine gate-shaped silicon core wires 12 arranged in a bell jar 1 so as to connect these in series or in parallel. Series/parallel switching of the circuit is performed through switches S1 to S3. A current is supplied to the circuit 16 from a low frequency power source 15L which supplies a low frequency current or a high frequency power source 15H which supplies a frequency-variable high frequency current having a frequency of ≥2 kHz. When the two pairs of shrine gate-shaped silicon core wires 12 (or polycrystalline silicon rods 11) are connected in series by closing the switch S1 and opening the switches S2 and S3, and a switch S4 is switched to the high frequency power source 15H side, a high frequency current having a frequency of ≥2 kHz is supplied to the series-connected shrine gate-shaped silicon core wires 12 (or polycrystalline silicon rods 11), whereby these can be electrically heated.
申请公布号 JP2013170118(A) 申请公布日期 2013.09.02
申请号 JP20120037161 申请日期 2012.02.23
申请人 SHIN-ETSU CHEMICAL CO LTD 发明人 NEZU SHIGEYOSHI;KUROSAWA YASUSHI;HOSHINO SHIGEO
分类号 C01B33/035;C23C16/46 主分类号 C01B33/035
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