| 摘要 |
PROBLEM TO BE SOLVED: To obtain an electrically rewritable semiconductor nonvolatile memory device which inhibits deterioration of a tunnel insulation film without increasing an occupied area to achieve high reliability.SOLUTION: In a semiconductor nonvolatile memory device, a floating gate electrode includes an amorphous silicon region and a polysilicon region. The amorphous silicon region is arranged on a part on an upper side surface and lateral face of the floating gate electrode, which contacts a control insulation film. The polysilicon region is arranged in a region of the floating gate electrode, which contacts a tunnel insulation film. A fine convexoconcave is formed on the surface part of the floating gate electrode, which contacts the control insulation film. |
