| 摘要 |
PURPOSE: The method of making a solid battery doped layer by using the solid phase epitaxy skips removal of PSG (PhosphoSilicate Glass) and edge isolation process because in the process of the electro plasticity emitter or all electro fields are made simultaneously. CONSTITUTION: Crystalline structure substrate is ready (S110). Above Crystalline structure substrate gets textured (S120). A amorphous layer of doped with impurities on the all surface of Crystalline structure substrate is evaporated (S130). An anti-reflection coating is evaporated on the surface of amorphous silicon layer that is doped with the above impurities (S140). Metal pastes are printed on the all surface of the above Crystalline structure substrate (S150) (S160). The above results become plastic simultaneously (S170). In the step of the above plasticity, the amorphous layer doped with the above impurities become solid phase according to plasticity, and the emitter or all the electro field is formed by expanding the impurities of above the amorphous layer to Crystalline structure substrate (S170). [Reference numerals] (S110) Prepare crystalline silicon substrate; (S120) Texturing; (S130) Deposit an amorphous silicon layer doped with impurities; (S140) Deposit an antireflection layer; (S150) Print metal paste in the front of a silicon substrate; (S160) Print metal paste in the rear of a silicon substrate; (S170) Simultaneous plasticity |
