| 摘要 |
A semiconductor integrated circuit includes a bypass circuit that forms a bypass path under a low voltage condition, and the bypass circuit includes first and second bypass MOS transistors respectively placed between drains of first and second PMOS transistors and a ground voltage terminal, each transistor having a gate to which a second power supply voltage is applied, and third and fourth bypass MOS transistors respectively placed between the first and second bypass MOS transistors and the ground voltage terminal, each transistor controlled to be ON and OFF in accordance with an input signal and a voltage condition.
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