FINFETS AND METHOD OF FABRICATING THE SAME

摘要

The disclosure relates to a fin field effect transistor (FinFET). An exemplary structure for a FinFET comprises a substrate comprising a major surface; a plurality of first trenches having a first width and extending downward from the substrate major surface to a first height, wherein a first space between adjacent first trenches defines a first fin; and a plurality of second trenches having a second width less than first width and extending downward from the substrate major surface to a second height greater than the first height, wherein a second space between adjacent second trenches defines a second fin.