发明名称 |
Method of Manufacturing a Semiconductor Device |
摘要 |
Semiconductor devices include a semiconductor substrate with a stack structure protruding from the semiconductor substrate and surrounded by an isolation structure. The stack structure includes an active layer pattern and a gap-filling insulation layer between the semiconductor substrate and the active layer pattern. A gate electrode extends from the isolation structure around the stack structure. The gate electrode is configured to provide a support structure for the active layer pattern. The gate electrode may be a gate electrode of a silicon on insulator (SOI) device formed on the semiconductor wafer and the semiconductor device may further include a bulk silicon device formed on the semiconductor substrate in a region of the semiconductor substrate not including the gap-filing insulation layer. |
申请公布号 |
US2013224925(A1) |
申请公布日期 |
2013.08.29 |
申请号 |
US201313854322 |
申请日期 |
2013.04.01 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
OH CHANG-WOO;PARK DONG-GUN;KIM DONG-WON;LI MING;KIM SUNG-HWAN |
分类号 |
H01L29/66;H01L21/762 |
主分类号 |
H01L29/66 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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