发明名称 Sequential programming of sets of non-volatile elements to improve boost voltage clamping
摘要 A non-volatile storage system reduces program disturb in a set of non-volatile storage elements by programming using selected bit line patterns which increase the clamped boosting potential of an inhibited channel to avoid program disturb. First, second and third sets of non-volatile storage elements are programmed in separate sequences, one after another, so that all program-verify operations occur for the first set, then for the second set, and then for the third set. Each non-volatile storage element in a set is separated from the next closest non-volatile storage element in the set at least two other non-volatile storage elements in the set.
申请公布号 US8520448(B1) 申请公布日期 2013.08.27
申请号 US201313860141 申请日期 2013.04.10
申请人 SANDISK TECHNOLOGIES INC. 发明人 LUTZE JEFFREY W;DUTTA DEEPANSHU
分类号 G11C7/00 主分类号 G11C7/00
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