| 摘要 |
PROBLEM TO BE SOLVED: To prevent characteristic deterioration of a photodiode.SOLUTION: In a solid-state imaging device, a photodiode 1 includes a first semiconductor layer 10 of a first conductivity type buried in a groove RX in a semiconductor substrate 150, and a first impurity region 151 of the first conductivity type provided in the semiconductor substrate 150 along the first semiconductor layer 10. |
