| 摘要 |
PROBLEM TO BE SOLVED: To form embedded bit lines of a vertical transistor in a simple method and with high accuracy.SOLUTION: A semiconductor device manufacturing method comprises: forming semiconductor pillars which are arranged at regular intervals in the past so as to be arranged at intervals alternately wide and narrow; filling an insulation film 3a in a narrow interval; forming conductive films to be embedded bit lines on respective sides of semiconductor pillars (1b, 1c) which face each other across a wide interval in sidewall-shape; further filling an insulation film 5 between the conductive film sidewalls; and forming embedded bit lines 6 by etch-back of the insulation film and etching of the conductive film. |
