发明名称 |
Cross-Coupled Transistor Circuit Including Offset Inner Gate Contacts |
摘要 |
A first conductive gate level feature forms a gate electrode of a first transistor of a first transistor type. A second conductive gate level feature forms a gate electrode of a first transistor of a second transistor type. A third conductive gate level feature forms a gate electrode of a second transistor of the first transistor type. A fourth conductive gate level feature forms a gate electrode of a second transistor of the second transistor type. A first contact connects to the first conductive gate level feature over an inner non-diffusion region. The first and fourth conductive gate level features are electrically connected through the first contact. A second contact connects to the third conductive gate level feature over the inner non-diffusion region and is offset from the first contact. The third and second conductive gate level features are electrically connected through the second contact.
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申请公布号 |
US2013207197(A1) |
申请公布日期 |
2013.08.15 |
申请号 |
US201313831664 |
申请日期 |
2013.03.15 |
申请人 |
BECKER SCOTT T.;MALI JIM;LAMBERT CAROLE |
发明人 |
BECKER SCOTT T.;MALI JIM;LAMBERT CAROLE |
分类号 |
G06F17/50;H01L27/088 |
主分类号 |
G06F17/50 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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