发明名称 |
CUT-MASK PATTERNING PROCESS FOR FIN-LIKE FIELD EFFECT TRANSISTOR (FINFET) DEVICE |
摘要 |
A method for patterning a plurality of features in a non-rectangular pattern, such as on an integrated circuit device, includes providing a substrate including a surface with a plurality of elongated protrusions, the elongated protrusions extending in a first direction. A first layer is formed above the surface and above the plurality of elongated protrusions, and patterned with an end cutting mask. The end cutting mask includes two nearly-adjacent patterns with a sub-resolution feature positioned and configured such that when the resulting pattern on the first layer includes the two nearly adjacent patterns and a connection there between. The method further includes cutting ends of the elongated protrusions using the pattern on the first layer.
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申请公布号 |
US2013210232(A1) |
申请公布日期 |
2013.08.15 |
申请号 |
US201213369818 |
申请日期 |
2012.02.09 |
申请人 |
DE HO WEI;LU KUEI-LIANG;SHIEH MING-FENG;CHANG CHING-YU;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
DE HO WEI;LU KUEI-LIANG;SHIEH MING-FENG;CHANG CHING-YU |
分类号 |
H01L21/311;B44C1/22;C23C16/04 |
主分类号 |
H01L21/311 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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