METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device having a wiring structure which suppresses an increase in layer resistance and is excellent in stress migration resistance and adhesion to an insulating film.SOLUTION: An intermediate wiring layer 221 of a semiconductor device 200 is formed by: providing a metal layer 235 on a barrier layer 231; providing a first nitrogen-containing film 237 on the metal layer 235; and providing a second nitrogen-containing film 239 on the first nitrogen-containing film 237. The nitrogen content of the first nitrogen-containing film 237 is lower than that of the second nitrogen-containing film 239.