| 摘要 |
<p>A method of forming a graphene film on a surface (20) of a substrate comprises the steps of: (i) locating a carbon source (22) at, or in a vicinity of, the surface (20) of the substrate; (ii) controlling ambient conditions at the surface (20) of the substrate to inhibit graphene nucleation on the surface (20); (iii) applying a temporary change of one or more of the ambient conditions at a localised site (30) on the surface (20) of the substrate to initiate graphene nucleation at the localised site (30); (iv) controlling the ambient conditions at the surface (20) of the substrate, following initiation of graphene nucleation at the localised site, to simultaneously inhibit graphene nucleation and enable graphene growth on the surface (20).</p> |
