THIN-FILM TRANSISTOR ARRAY SUBSTRATE AND MANUFACTURING METHOD THEREFOR

摘要

A thin-film transistor array substrate (11) and a manufacturing method therefor. A transparent conductive layer (120) and a first metal layer (130) are deposited on a substrate (110); a multi-stage adjustment mask is utilized to form a gate electrode (140) and a common electrode (121). A gate insulation layer (150) and a semiconductor layer (160) are deposited on the substrate (110); a second mask is utilized to retain the semiconductor layer (160) on the gate electrode (140). A second metal layer (170) is deposited on the substrate (110); a third mask is utilized to form a source electrode (171), a drain electrode (172), and a pixel electrode (173). Thus, the manufacturing process is simplified.