发明名称 MTJ CELL FOR AN MRAM DEVICE AND A MANUFACTURING METHOD THEREOF
摘要 An MTJ cell includes a first metal layer elongated in the X-direction; a second metal layer separated from the first metal layer and elongated in the Y-direction; a magnetic tunnel junction (MTJ) interposed between the overlapping parts of the first and second metal layers and having extended parts not covered by the second metal layer, the MTJ including a pinned layer, a barrier layer, and a storage layer sequentially laminated; and a yoke spanning across the second metal layer, with both ends in the X-direction contacting the top surface of the extended parts of the storage layer not covered by the second metal layer, either directly or through an insulator. The planar shapes of the MTJ and the yoke possess a quantum easy axis in the X-direction and Y-direction, respectively. The storage layer at its extended parts possesses a relaxed coupling with the yoke that essentially achieves continuity of flux return directly or indirectly through a nonmagnetic insulating layer, while maintaining a quantum easy axis orthogonal to that of the yoke. The YZ cross-sectional area of the yoke is greater than the YZ cross-sectional area of the storage layer.
申请公布号 US2013201755(A1) 申请公布日期 2013.08.08
申请号 US201313752850 申请日期 2013.01.29
申请人 QUANTUMAG CONSULTANCY CORP.;QUANTUMAG CONSULTANCY CORP. 发明人 EZAKI JOICHIRO
分类号 H01L43/02;H01L43/12 主分类号 H01L43/02
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