发明名称 |
GRAPHENE-GRAPHENE OXIDE RESISTIVE RANDOM ACCESS MEMORY |
摘要 |
<p>An electronic memory device based on the reversible changes in a resistance of graphene when it is oxidized to graphene oxide or reduced back to graphene by voltage application. The redox chemical reactions are enabled by access of the graphene to a source of oxygen. The device is ionizing radiation tolerant and immune to single event effects.</p> |
申请公布号 |
WO2013116273(A1) |
申请公布日期 |
2013.08.08 |
申请号 |
WO2013US23750 |
申请日期 |
2013.01.30 |
申请人 |
APPLIED NANOTECH HOLDINGS, INC.;PAVLOVSKY, IGOR |
发明人 |
PAVLOVSKY, IGOR |
分类号 |
G06F13/00 |
主分类号 |
G06F13/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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