发明名称 |
Method of manufacturing a semiconductor device |
摘要 |
<p>Semiconductor devices including at least one thin film transistor (TFT) and methods of manufacturing the semiconductor devices. The semiconductor device may include an oxide TFT having a self-align top gate structure. The oxide TFT may include a first oxide semiconductor layer having a first source region, a first drain region, and a first channel region between the first source region and the first drain region, and a first gate insulating layer and a first gate electrode, which are sequentially stacked on the first channel region. A bottom gate electrode may be further disposed below the first oxide semiconductor layer, and the first oxide semiconductor layer may have a multi-layer structure.</p> |
申请公布号 |
EP2120267(B1) |
申请公布日期 |
2013.08.07 |
申请号 |
EP20090160223 |
申请日期 |
2009.05.14 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
PARK, JAE-CHUL;KWON, KEE-WON |
分类号 |
H01L29/786;H01L29/66 |
主分类号 |
H01L29/786 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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