| 摘要 |
This nitride semiconductor light-emitting device is provided with a nitride semiconductor light-emitting chip, which emits polarization light and has an active layer having a non-polar surface or a semipolar surface as the growth surface, and a translucent cover for passing the light from the active layer, wherein: the translucent cover has a first translucent member arranged on a region on the side of the nitride semiconductor light-emitting chip in a direction that is perpendicular to the polarization direction of the polarization light, and a second translucent member arranged on a region above the nitride semiconductor light-emitting chip; and the diffuse transmittance of light at the first translucent member is higher than the diffuse transmittance of light at the second translucent member. |
