| 摘要 |
In order to improve the photoelectric conversion efficiency of a photoelectric conversion device, this photoelectric conversion device (11) is provided with an electrode layer (2), a first semiconductor layer (3) that is positioned on the electrode layer (2) and contains a polycrystalline semiconductor, and a second semiconductor layer (4) that is positioned on the first semiconductor layer (3) and forms a p-n junction with the first semiconductor layer (3), and the average particle size of crystal grains in the first semiconductor layer is larger near the surface on the electrode (2) side than the center of the first semiconductor layer (3) in the lamination direction. |
