| 摘要 |
PROBLEM TO BE SOLVED: To enable local control of electric charge in the vicinity of an insulating layer.SOLUTION: A semiconductor device comprises: an insulating layer, such as a silicon oxide film, formed on a silicon substrate; and a silicon layer formed on the insulating layer and comprising, e.g., circuit elements of an integrated circuit formed therein. In the insulating layer, a charge storage layer for storing electric charge, such as a silicon nitride film, is locally formed. This disclosure is applicable not only to the semiconductor device also to a manufacturing device and method and to an image pickup element. |
