发明名称 |
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF |
摘要 |
An object is to reduce leakage current and parasitic capacitance of a transistor used for an LSI, a CPU, or a memory. A semiconductor integrated circuit such as an LSI, a CPU, or a memory is manufactured using a thin film transistor in which a channel formation region is formed using an oxide semiconductor which becomes an intrinsic or substantially intrinsic semiconductor by removing impurities which serve as electron donors (donors) from the oxide semiconductor and has larger energy gap than that of a silicon semiconductor. With use of a thin film transistor using a highly purified oxide semiconductor layer with sufficiently reduced hydrogen concentration, a semiconductor device with low power consumption due to leakage current can be realized.
|
申请公布号 |
US2013193434(A1) |
申请公布日期 |
2013.08.01 |
申请号 |
US201313799246 |
申请日期 |
2013.03.13 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD.;SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
YAMAZAKI SHUNPEI;KOYAMA JUN;MIYAKE HIROYUKI;TAKAHASHI KEI;TOYOTAKA KOUHEI;TSUBUKU MASASHI;NODA KOSEI;KUWABARA HIDEAKI |
分类号 |
H01L29/26 |
主分类号 |
H01L29/26 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|