A THINNER COMPOSITION FOR REMOVING PHOTOSENSITIVE RESIN

摘要

PURPOSE: A thinner composition for removing photoresist is provided to effectively remove unnecessarily coated photoresist on the edge part or in the rear side of the wafer in a short time during the semiconductor or display manufacturing process. CONSTITUTION: A thinner composition for removing photoresist includes (a) an ethyl 3- ethoxypropionic acid of 20-70 parts by weight, (B) a propylene glycol monomethyl ether acetate of 20-60 parts by weight, (c) a gamma-butyrolactone of 1-20 parts by weight, (d) a methyl lactate of 1-20 parts by weight and surfactant of 0.001-0.1 parts by weight against the thinner composition of 100.0 parts by weight. A pattern formation method of a semiconductor or a display device includes a step of applying the thinner composition for removing photoresist to a substrate.