| 摘要 |
<p>PURPOSE: A semiconductor device and a manufacturing method thereof are provided to form a mask pattern comprising opening parts in which a first direction width and a second direction width are substantially the same. CONSTITUTION: An etched layer (41) is formed on a substrate (40). A first mask pattern (42), which is including line patterns expanded in parallel with a first direction, is formed on the etched layer. A second mask pattern (43A) is formed before or after forming the first mask pattern. The second mask pattern comprises opening parts of a hole shape arranged at a position overlapped with the spaces of the first mask pattern. A first length among the opening parts adjacent to the first direction is shorter than a second length among opening parts adjacent to a second direction perpendicular to the first direction.</p> |
