| 摘要 |
PROBLEM TO BE SOLVED: To improve etching resistance of extreme ultraviolet (EUV) photoresist.SOLUTION: The method comprises: obtaining a substrate comprising a hard mask and EUV photoresist formed above the hard mask; encapsulating the patterned layer of EUV photoresist by forming on the photoresist an encapsulating layer made of silicon oxide, silicon nitride, silicon oxynitride, germanium oxide, germanium nitride, germanium oxynitride, silicon germanium oxide, silicon germanium nitride, and silicon germanium oxynitride; and dry etching the substrate for patterning the hard mask. |
