| 摘要 |
<p>The present invention addresses the problem of providing a surrounding gate transistor (SGT) manufacturing method which is a gate-last process and by which two transistors are formed from a single dummy pattern, and providing the resulting SGT structure. The problem is solved by providing a method that comprises the following: a step for forming first and second fin-shaped silicon layers on a substrate, forming a first insulation film on the periphery of the first and second fin-shaped silicon layers, and forming first and second columnar silicon layers on top of the first and second fin-shaped silicon layers; a step for forming diffusion layers by injecting impurities above the first and second columnar silicon layers, above the first and second fin-shaped silicon layers, and below the first and second columnar silicon layers; a step for creating a gate insulation film and first and second polysilicon gate electrodes; a step for forming silicide above the diffusion layers above the first and second fin-shaped silicon layers; and a step for depositing interlayer insulation films, exposing the first and second polysilicon gate electrodes, and, after etching the first and second polysilicon gate electrodes, depositing metal to form first and second metal gate electrodes.</p> |
