SEMICONDUCTOR LIGHT EMITTING DEVICE

摘要

PURPOSE: A semiconductor light emitting device is provided to effectively reduce a light absorption loss by reducing the width of an n-side branch electrode. CONSTITUTION: Multiple semiconductor layers include an n-type nitride semiconductor layer (330), a p-type nitride semiconductor layer (350), and an active layer (340). The active layer is placed between a first semiconductor layer and a second semiconductor layer and generates light through the recombination of electrons and holes. A p-side electrode is placed on the second semiconductor layer. An n-side transmissive conductive film (335) is formed on the first semiconductor layer exposed by etching the second semiconductor layer and the active layer. An n-side electrode is placed on the n-side transmissive conductive film.