| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device which inhibits the deterioration of the yield relating to the formation of a via hole and improves the throughput.SOLUTION: Compound semiconductor layers 2, 3 are formed on a substrate 1, and an electrode 4s is formed on the compound semiconductor layers 2, 3. Openings 6, 1a, which reach at least a surface of the substrate 1, are formed in the compound semiconductor layers 2, 3, and a conductive layer 8, which is connected with the electrode 4s, is formed in the openings 6, 1a. Dry etching is conducted with the conductive layer 8 used as an etching stopper thereby forming a via hole 1s, which reaches from the rear surface side of the substrate 1 to the conductive layer 8, in the substrate 1 and forming via wiring 16 in an area ranging from the interior of the via hole 1s to the rear surface of the substrate 1. Widths of the deepest parts of the openings 6, 1 are set so as to be smaller than widths of the openings 6, 1a on the surfaces of the compound semiconductor layers 2, 3. |
