发明名称 |
POWER SEMICONDUCTOR MODULE AND METHOD OF MANUFACTURING THE SAME |
摘要 |
First chip main surfaces of first semiconductor chips are bonded to a heat spreader, and second chip main surfaces of the first semiconductor chips are bonded to a first electrode. First chip main surfaces of second semiconductor chips are bonded to a heat spreader, and second chip main surfaces of the second semiconductor chips are bonded to a first electrode. A plurality of electrodes are provided by a lead frame. An insulating member is provided on a side opposite to the chips when viewed from the heat spreader. An insulating substrate is provided on a side opposite to the chips when viewed from the first electrodes.
|
申请公布号 |
US2013181228(A1) |
申请公布日期 |
2013.07.18 |
申请号 |
US201213617048 |
申请日期 |
2012.09.14 |
申请人 |
USUI OSAMU;YOSHIMATSU NAOKI;KIKUCHI MASAO;MITSUBISHI ELECTRIC CORPORATION |
发明人 |
USUI OSAMU;YOSHIMATSU NAOKI;KIKUCHI MASAO |
分类号 |
H01L25/07;H01L21/98;H01L29/161 |
主分类号 |
H01L25/07 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|