发明名称 POWER SEMICONDUCTOR MODULE AND METHOD OF MANUFACTURING THE SAME
摘要 First chip main surfaces of first semiconductor chips are bonded to a heat spreader, and second chip main surfaces of the first semiconductor chips are bonded to a first electrode. First chip main surfaces of second semiconductor chips are bonded to a heat spreader, and second chip main surfaces of the second semiconductor chips are bonded to a first electrode. A plurality of electrodes are provided by a lead frame. An insulating member is provided on a side opposite to the chips when viewed from the heat spreader. An insulating substrate is provided on a side opposite to the chips when viewed from the first electrodes.
申请公布号 US2013181228(A1) 申请公布日期 2013.07.18
申请号 US201213617048 申请日期 2012.09.14
申请人 USUI OSAMU;YOSHIMATSU NAOKI;KIKUCHI MASAO;MITSUBISHI ELECTRIC CORPORATION 发明人 USUI OSAMU;YOSHIMATSU NAOKI;KIKUCHI MASAO
分类号 H01L25/07;H01L21/98;H01L29/161 主分类号 H01L25/07
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