| 摘要 |
<p>A plasma doping apparatus (31) performs doping by injecting a dopant into a substrate to be processed (W). The plasma doping apparatus (31) is provided with: a processing container (32), in which the dopant is injected into the substrate to be processed (W); a gas supplying unit (33), which supplies a doping gas and an inert gas for plasma excitation to the inside of the processing container (32); a holding table (34), which is disposed in the processing container (32), and holds, on the holding table, the substrate to be processed (W); a plasma generating mechanism (39), which generates plasma in the processing container (32) using microwaves; a pressure adjusting mechanism, which adjusts pressure in the processing container (32); and a control unit (28), which controls the plasma doping apparatus (31). The control unit (28) controls the pressure adjusting mechanism such that pressure in the processing container (32) is 100 mTorr or more but less than 500 mTorr, and performs the plasma processing with respect to the substrate to be processed (W) using the plasma thus generated by means of the plasma generating mechanism (39).</p> |
