| 摘要 |
A complementary metal-oxide-semiconductor (CMOS) static random access memory (SRAM) with no well contacts within the memory array. Modern sub-micron CMOS structures have been observed to have reduced vulnerability to latchup. Chip area is reduced by providing no well contacts within the array. Wells of either or both conductivity types may electrically float during operation of the memory. In other implementations, extensions of the array wells into peripheral circuitry may be provided, with well contacts provided in those extended portions. |
