发明名称 |
METHOD FOR CLEANING SILICON SUBSTRATE, AND METHOD FOR PRODUCING SOLAR CELL |
摘要 |
<p>A cleaning method of a silicon substrate includes a first step of etching a surface of a silicon substrate by a metal-ion-containing mixed aqueous solution of an oxidizing agent and hydrofluoric acid and of forming a porous layer on the surface of the silicon substrate, a second step of etching a pore of the porous layer by mixed acid mainly containing hydrofluoric acid and nitric acid and of forming texture on the surface of the silicon substrate, a third step of etching the surface of the silicon substrate on which the texture is formed with an alkaline chemical solution, and a fourth step of treating the silicon substrate etched by the alkaline chemical solution by ozone-containing water, of generating an air bubble within the pore formed in the silicon substrate, and of removing metal and organic impurities from within the pore.</p> |
申请公布号 |
EP2615634(A1) |
申请公布日期 |
2013.07.17 |
申请号 |
EP20120779293 |
申请日期 |
2012.03.15 |
申请人 |
MITSUBISHI ELECTRIC CORPORATION |
发明人 |
NISHIMOTO, YOICHIRO;YASUNAGA, NOZOMU;MATSUDA, TAKAYOSHI |
分类号 |
H01L21/306;H01L31/04 |
主分类号 |
H01L21/306 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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