| 摘要 |
A nitride-based semiconductor light-emitting element includes a substrate and a nitride semiconductor multilayer structure. The nitride semiconductor multilayer structure includes a nitride semiconductor active layer which emits polarized light. Angle theta, which is formed by at least one of the plurality of lateral surfaces of the substrate with respect to the principal surface of the substrate, is greater than 90°. Angle theta2 (mod 180°), which is an absolute value of an angle which is formed by an intersecting line of at least one of the plurality of lateral surfaces of the substrate and the principal surface of the substrate with respect to a polarization direction in the principal surface of the polarized light, is an angle which does not include 0° or 90°.
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