| 摘要 |
PURPOSE: A semiconductor device and a method for manufacturing the same are provided to increase the area of a dielectric layer by using a lower electrode as a leisure part and a capacitor. CONSTITUTION: A storage node contact plug is formed on a semiconductor substrate. The storage node contact plug is a line type. A lower electrode (250) has a mesh structure. The lower electrode is formed in the upper part of the storage node contact plug. A dielectric layer and an upper electrode are formed on the lower electrode.
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